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TlInGaAsN/TlInP/InP hetero-structures were studied for the application to the temperature insensitive wavelength laser diodes. By the introduction of N, the incorporation of Tl was increased, but optical properties were degraded. In order to solve this problem, TlInGaAsN/TlInP multiple layer structures with thin TlInGaAsN layer was proposed and the improvement in optical properties was confirmed.
We prepared TlInGaAsN/TlInP triple quantum well structures using gas source molecular beam epitaxy and characterized their structures by means of transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM). Cross-sectional TEM and STEM observations and electron diffraction experiments revealed that naturally-formed vertical quantum wells, so-called lateral composition...
In the pursuit of devices with reduced temperature-dependent emission wavelengths, TlInGaAsN double quantum well (DQW) structures with different barriers were grown on GaAs substrates by MBE and investigated. Although TlGaAsN barriers gave rise to higher Tl incorporation, as compared to TlGaAs barriers, the presence of lot of dislocations and very rough interfaces reduced the PL characteristics. The...
TIGalnNAs-based DQW structures grown at various growth parameters were studied by secondary ion mass spectroscopy (SIMS). Enhanced Tl incorporation could be obtained using TlGaNAs barriers. A direct relationship between the Tl incorporation and N composition is clearly established by the analysis of the effect of growth temperature, growth rate, ECR power and nitrogen flow rate. The Tl incorporation...
TlInGaAs/TllnP/InP separate confinement heterostructures (SCHs) were grown by gas-source molecular-beam epitaxy and metal stripe laser diodes (LDs) were fabricated. Temperature variation of electroluminescence peak wavelength was as small as 0.06 nm/K due to the reduced temperature variation of band gap energy of TlInGaAs. Pulsed laser operation was achieved at 77 K - 297 K. Threshold current density...
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