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Self-aligned spacer double patterning (SADP) scheme has been proposed as an alternative to litho-etch-litho-etch (LELE) scheme because if its superior control of the lines that are patterned by a uniform and conformal deposition of a spacer layer along sidewalls of the sacrificial patterning lines. However, it adds process complexity in the film stacks and extra challenges on both the linewidth and...
Continued scaling of the gate dielectric has driven the adoption of high-k materials for the gate stack. A key challenge for enabling the adoption of these high-k materials is providing a SiO2/SiON interfacial layer in a controlled and repeatable manner. Interfacial oxide is a buffer layer between silicon substrate and high-k dielectric, the role of the interfacial layer is to improve high-k dielectric/silicon...
The traditional truncated-binary-exponential-backoff contention-resolution scheme can address the collision problem of carrier-sense multiple-access networks when the number of users is limited. However, its performance significantly worsens when many users join the contention or when the network is saturated. To address this issue, we propose a demand-assigned multiaccess (DAMA) time-division multiple-access...
Co-channel interference is a limiting factor to the predictability and performance of wireless networks, thus interference-oriented scheduling of channel access has become a basic building block of wireless networking. Despite much work in this area, the existing algorithms did not address the limiting impact of interference when optimizing transmission scheduling. Towards understanding the importance...
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