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Temperature dependent activation energy (Ea) has been observed for backend low-κ (LK) and extreme LK (ELK) dielectric TDDB. We experimentally demonstrated that the charge transport through the LK/ELK is dominated by the Poole-Frenkel mechanism, even in the low E-field, and Cu-ion diffusion occurs at a later stage of stressing, which is more probable at high temperatures and in sub-65nm (40-28nm) technologies...
The short length on the electromigration lifetime is a useful effect to increase current limits in advanced circuits. A way to increase current limit is to consider the Blech effect. The electromigration threshold due to Blech effect in copper interconnect for 65 nm and 45 nm technology is reported in this study. The critical product (jL)c was determined by varying the metal length and stress current...
Wafer-level ramped voltage to dielectric breakdown testing (RVDB) on copper/low k interconnect dielectrics has been used for reliability assessment and is motivated by practical needs for shortened test cycle time and large sampling for accurate statistical characterization. This work has identified a meaningful correlation between RVDB and TDDB (time dependent dielectric breakdown), which demonstrates...
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