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Based on the Meyer-Neldel Rule (MNR), analytical drain current model is presented for the polycrystalline ZnO thin-film transistors at different temperatures. The MNR-based drain current model is developed from the surface-potential-based model considering the effective medium approximation (EMA). Applying the Meyer-Neldel Rule, the drain current model is developed. The model results are in agreement...
Electrostatic discharge (ESD) effect in the p-type polycrystalline thin film transistor (poly-Si TFT) are investigated by employing a transmission line pulses with different durations (100ns and 200ns). The experimental results shown that P+/poly-Si junction governs the transition of the off-state phase and on-state phase observed in the TLP I–V curves. In addition, the breakdown mechanism in the...
Simple drain current and 1/f noise expressions are presented for polycrystalline silicon (poly-Si) thin-film transistors (TFTs) in leakage regime. The leakage current expression Ids is derived from the thermal field emission mechanism. The leakage current noise power spectral density (PSD) expression SIds is derived from the carrier number fluctuation theory. It is proved that SIds is proportional...
This paper proposed a physical model for reverse subthreshold currents in the amorphous silicon thin film transistors. Firstly, an approximation for the band bending in the back interface as a function of gate-source voltage is derived. By considering of deep states, a current model based on electron conduction in the back channel is then developed. Finally, the proposed model was verified using the...
In this paper, a physical model based on surface potential is presented for double gate a-Si:H TFTs. Firstly, a new model for the distribution of potential and electrical field along the bulk a-Si:H layer is proposed when both the front and back gates are biased in the positive voltages. Using this model, the front and back surface potential can be calculated from the equation groups by the iterative...
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