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As a promising candidate for next generation lithography, multiple e-beam lithography (MEBL) is able to improve manufacturing throughput using parallel beam printing. In MEBL, a layout is split into stripes and the layout patterns are cut by stripe boundaries, then all the stripes are printed in parallel. If a via pattern or a vertical long wire is overlapping with a stitch, it may suffer from poor...
As the feature size of semiconductor process further scales to sub-16 nm technology node, triple patterning lithography (TPL) has been regarded as one of the most promising lithography candidates along with extreme ultraviolet, electron beam lithography, and directly self-assembly. M1 and contact layers, which are usually deployed within standard cells, are the most critical and complex parts for...
Contests and their benchmarks have become an important driving force to push our EDA domain forward in different areas lately, such as ISPD, TAU, DAC contests. The annual CAD Contest in Taiwan has been held for 13 consecutive years and has successfully boosted the EDA research momentum in Taiwan. To encourage better research development on timely and practical EDA problems across all domains, CAD...
Contests and their benchmarks have become an important driving force to push our EDA domain forward in different areas lately, such as ISPD, TAU, DAC contests. To encourage better research development on timely and practical EDA problems across all domains, a new international CAD Contest is held this year under the joint sponsorship of the IEEE CEDA and Ministry of Education (MOE) of Taiwan. Three...
With the feature size shrinking down to 65 nm and beyond, manufacturing process variation starts to significantly impact the device and interconnect electrical parameters, and therefore the performance of circuits. Back-end-of-line (BEOL) design for manufacturability concerns such as lithography variation and misalignment are more pronounced in the advanced technology node. Since SRAM cell always...
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