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Hyperspectral imaging (HSI) has been used in detecting affective states via tissue oxygen saturation (StO2) recently. However the number of wavelength used in HSI for generating StO2 are large. Therefore the reduction of the wavelength number plays a key role in real-time affection detection. In this paper, a physarum network (PN) approach was applied to select wavelengths from traditional waveband...
Simple drain current and 1/f noise expressions are presented for polycrystalline silicon (poly-Si) thin-film transistors (TFTs) in leakage regime. The leakage current expression Ids is derived from the thermal field emission mechanism. The leakage current noise power spectral density (PSD) expression SIds is derived from the carrier number fluctuation theory. It is proved that SIds is proportional...
In this paper, effect of bias dependence of substrate NPN (SNPN) transistors on total dose radiation is investigated. By considering of bulk field and fringing electric field in the oxide, the degradation mechanisms are discussed in numerical simulations. Experimental results show that the applied emitter voltage and the emitter-base junction bias play important roles in the total dose irradiation...
Capacitance-voltage (C-V) and frequency dependent conductance-voltage (G-V) measurements have been carried out to investigate the charging and discharging effect induced by interface states and nanocrystalline Si (nc-Si) in floating gate MOS structures. Distinct conductance peaks are observed in the G-V curves for the floating gate with and without nc-Si dots. Based on the calculation of interface...
Size-controlled nanocrystals (Si NCs) in floating gate MOS structure have been fabricated by thermal annealing of Si-rich SiNx layers with high ratio of Si/N. High resolution transmission electronic microscopy (HRTEM) reveals the size of Si NCs can be controlled by varying the thickness of Si-rich SiNx layer. Based on the analysis of XPS and Raman measurement, the relation between the size of Si NCs...
In this paper, a physical model based on surface potential is presented for double gate a-Si:H TFTs. Firstly, a new model for the distribution of potential and electrical field along the bulk a-Si:H layer is proposed when both the front and back gates are biased in the positive voltages. Using this model, the front and back surface potential can be calculated from the equation groups by the iterative...
Based on conventional two-step ADC principle, an 8-bit 250MSPS modified two-step ADC is proposed to reduce power dissipation. It is realized by applying triple-stage comparison for the number reduction of comparators, substituting new reference region selecting logic (RRSL) blocks for sub-DACs and adding sample/hold (S/H) circuit to replace residue amplifier. Simulated with SMIC O.35 mum/3.3 V AMS...
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