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Based on the single electron tunneling and storage in an uniform nc-Si single layer within a-SiNx (or a-SiOx) / nc-Si/a-SiNx (or a-SiOx) structures, the nc-Si floating gate nonvolatile memories (NVM) have been fabricated. The performance of the program and erase speed as well as the retention time have been improved by using the nitrogen plasma treatments. In order to increase the storage density,...
The nanocrystalline Si quantum dot (nc-Si QD) stacking MOS structure is fabricated by plasma-enhanced chemical vapor depositon (PECVD). Negative differential resistance (NDR) characteristics are investigated in the nc-Si quantum dot floating gate MOS structure. Clear multi NDR peaks for electrons and holes are observed in the I-V curves and calculations indicate that these NDR characteristics should...
The unipolar resistive switching characteristics are investigated in silicon highly-rich SiOx (x<0.75) films. Pt/SiO0.732/Pt structure exhibits a good switching behavior with low operation voltage, long retention time, uniformly distributed resistance value and large memory widows etc. As-deposited SiO0732 films contain a large concentration (1×1019cm3) of dangling bonds and are rich in unsymmetric...
We report a nc-Si nonvolatile memory (NVM) device with nitrided nc-Si dots embedded in a floating gate. LPCVD was used to deposit a layer of nc-Si on the tunnel oxide layer at the pressure of 350mTorr. Subsequently as-deposited nc-Si dots were nitrided at 780°C in NH 3 ambient. The role of the nitridation of nc-Si dots for improving performance of nc-Si NVM was investigated. First of all,...
Silicon nanowire transistor with side-gate and back-gate has been fabricated by electron beam lithography combined with dry oxidation on a doped silicon-on-insulator wafer. The effects of back-gate and side-gate on the properties of single electron transport were investigated by measuring the channel current as function of the applied gate voltages. The tunable single electron effect and Coulomb oscillations...
Capacitance-voltage (C-V) and frequency dependent conductance-voltage (G-V) measurements have been carried out to investigate the charging and discharging effect induced by interface states and nanocrystalline Si (nc-Si) in floating gate MOS structures. Distinct conductance peaks are observed in the G-V curves for the floating gate with and without nc-Si dots. Based on the calculation of interface...
The nc-Si nonvolatile memory devices with high performance have been fabricated by using general CMOS techniques. High resolution transmission electronic microscope (HRTEM) shows that the average size of nc-Si is 8 nm and its density is 3×1011/cm2. The performance of programming/ erasing and retention time is mainly depending on the quality and thickness of tunnel layer and control layer. The results...
Size-controlled nanocrystals (Si NCs) in floating gate MOS structure have been fabricated by thermal annealing of Si-rich SiNx layers with high ratio of Si/N. High resolution transmission electronic microscopy (HRTEM) reveals the size of Si NCs can be controlled by varying the thickness of Si-rich SiNx layer. Based on the analysis of XPS and Raman measurement, the relation between the size of Si NCs...
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