The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Here we report effects of gate length (Lg) scaling on the ballistic performance of a Si nanowire (NW) FET using three dimensional quantum simulation. Three different gate length 10nm, 12nm & 15nm are analyzed while 3nm diameter of the NW are taken. Current-Voltage characteristic is obtained by self-consistently solving the Non Equilibrium Greens Function (NEGF) transport equation with Poisson's...
Effect of gate length on the ballistic performance of nanoscale In0.2Ga0.8Sb double gate n-MOSFET is studied. Non equilibrium greens function (NEGF) method is used to find the current-voltage characteristics. Well known SILVACO's ATLAS device simulation package is used to carry out the simulation. Three different gate length, 10nm, 13nm and 15 nm are analyzed. The simulation result shows that the...
The Capacitance-Voltage (CV) characteristics of InGaSb based n-MOSFET are investigated by quantum mechanical calculation solving 1D self-consistent Schrodinger-Poisson equation using Silvaco's ATLAS device simulation package. The charge density profile is determined by wave function penetration effect within the oxide layer and Neuman boundary condition. Low and high frequency CV characteristics are...
The quasi-static capacitance-voltage (CV) characteristics of buried channel n-InGaSb MOSFET is investigated using SILVACO's ATLAS device simulation package. Self-consistent method is applied to solve the coupled one dimensional Schrödinger-Poisson equation taking into account of wave function penetration and strain effect. It is found that the CV profiles and threshold voltage are strongly depended...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.