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In this work, we investigated the performance tradeoff between program/erase speed and data retention of ferroelectric HfZrO memory. The monoclinic HfNO layer with a trapping mechanism was employed to improve the data retention. Under the thickness optimization of HfNO, the HfZrO/HfNO gate stack can be functionalized with volatile and non-volatile operation.
The manipulation of temperature coefficient of resistance (TCR) in TaN thin-film resistor (TFR) was demonstrated by electrical measurement and analysis through supercritical carbon dioxide (SCCO2 fluid treatment for the first time. The negative TCR value of TaN TFR changes to positive TCR value through annealing process due to the growth and merge of TaNx grain. After SCCO2 treatment, the positive...
In SONOS 3D NAND, if the string select transistor (SST) and the ground select transistor (GST) use memory cell's trapping dielectric as their gate dielectrics, they could suffer abnormal Vt shift due to unwanted charge injection during programming/erasing (P/E). To solve this, we remove the blocking oxide and the trapping nitride, and use the BE-SONOS' ONO tunneling dielectric and an additional LPCVD...
The energy efficiency of CMOS technology is fundamentally limited by transistor off-state leakage (IOFF). Mechanical switches have zero IOFF and therefore could be advantageous for ultra-low-power digital logic applications. This paper discusses recent advancements in relay logic switch technology and current challenges which must be addressed to realize its promise.
Epitaxial single crystal AlN thin films have been obtained on (001) sapphire substrates by helicon sputtering system at growth temperature of 450°C. Surface acoustic wave (SAW) filters were fabricated on AlN/sapphire. The center frequency is 354.2MHz, which corresponds to a phase velocity of 5667 m/s. The insertion loss and sidelobe rejection were about 24.9dB and 11.4dB, respectively. The value of...
In this work, the excimer-laser-induced crystallization of amorphous silicon (a-Si) films was investigated numerically and experimentally. This study had investigated the effects of irradiating energy density on the grain size and structure by scanning electron microscopy (SEM). In the surface microstructure analysis of the laser-irradiated area, the critical fluences (full-melt threshold, FMT) between...
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