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Epitaxial single crystal AlN thin films have been obtained on (001) sapphire substrates by helicon sputtering system at growth temperature of 450°C. Surface acoustic wave (SAW) filters were fabricated on AlN/sapphire. The center frequency is 354.2MHz, which corresponds to a phase velocity of 5667 m/s. The insertion loss and sidelobe rejection were about 24.9dB and 11.4dB, respectively. The value of...