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This paper reports a new approach for fabrication of high-aspect ratio low resistance vertical interconnects, providing an electrical interface between the front-side and the backside of the Silicon-on-Insulator (SOI) wafer. The method of Thru-Wafer Interconnects for Double-Sided (TWIDS) fabrication of MEMS is based on seedless copper electroplating, and allows for voids free features and high aspect...
Compare to the conventional structure, in this research, the structure of Cu pillar and tapered TSV for direct bonding has an excellent potential for low bonding temperature within a short bonding time. In addition, this scheme has the advantage of self-alignment ability. This paper focuses on the fabrication of taper-shape of through silicon via (TSV) and reports the quality and reliability investigation...
Corrosion is an important issue during chemical mechanical polishing (CMP). The surface protection should be considered during CMP and also after CMP post cleaning step. There are several parameters have an impact on corrosion of metal surfaces during CMP such as chelating agent (AC), corrosion inhibitor (I) and pH. Electrochemical behavior of cobalt, copper and tantalum are investigated for different...
As high-speed, high-density, and high-performance are the primary IC development targets, packaging technologies play a key role to bring out the best performance of those ICs. In this paper, an active component formed by an active chip embedded technology is developed for the package of a high speed DDR2 memory device. Embedding of semiconductor chips into an organic substrate provide a solution...
Recently, System in Package (SiP) technology is used to integrate a number of integrated circuits (ICs) enclosed in a single package or a module, which attracts a great attention from electronic industries due to its characteristics of smaller size, higher performance, lower overall cost and reduction of time to market. Based on the configurations of current SiP, there are two types of structure:...
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