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In this paper, we report the progressive electrical degradation and consequent breakdown (both soft and hard-breakdown regimes) of thin W-La2O3 stacked films deposited on silicon substrates and their influence on the electrical characteristics of metal-oxide-semiconductor (MOS) devices. Initial electrical degradation of the MOS devices results in an increase of the gate oxide leakage current (mostly...
We present experimental evidence that reveals steady state and transient magnetic fields modulate gate current leakage in MOS transistors and produce channel current interference. This steady- and transient-state electromagnetic interference is attributed to surface channel charge and mobility space- and time-modulation, as validated by Minimos-NT electromagnetic numerical simulations.
In this paper, we report and compare the reliability results obtained for W-La2O3 gated Metal-Oxide-Semiconductor (MOS) devices with those of HfO2-based systems reported in literature. Reliability issues like stress-induced leakage current (SILC), interface-states generation (Dit), threshold voltage shift (DeltaVth) and time to breakdown (tbd) were compared and analyzed for both dielectrics in order...
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