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3D VLSI integration is a promising alternative path towards CMOS scalability. It requires Low Temperature (LT) processing (≤600°C) for top FET fabrication. In this work, record performance is demonstrated for LT TriGate and FDSOI devices using Solid Phase Epitaxy (SPE). Optimization guidelines for further performance improvement are given for FD, TriGate and FinFET on insulator with the constraint...
A fully selfconsistent, coupled electro-thermo-mechanical model for nitride-based devices is presented and applied to a high-power AlGaN/GaN High Electron Mobility Transistor (HEMT). The influence of converse piezoelectric effect, thermal stress and of the selfconsistent coupling on the static device characteristics and on the stress distribution in the device is studied.
In this paper, we present a framework for the simulation of electronic devices based on a multiscale and multiphysics approach. A formal description is provided that includes both multiscale and multiphysics problems and which can be linked to already established multiscale methods. We present a set of simulations of an AlGaN/GaN nanocolumn based on a multiscale coupling between atomistic descriptions...
In this paper we review the progress made in the development of the new multiscale/multiphysics simulator TIBERCAD, able to combine on equal footing macroscopic and microscopic scales of device models. The tool is not limited to conventional devices but has been also applied to systems were transport of excitons or ions are important for the correct analysis of device behavior.
Calculations of optoelectronic properties of a GaN quantum dot embedded in an AlGaN nanocolumn are presented, using the TiberCAD simulator. The calculations emphasize the role of the growth direction in determining the quantum efficiency of such light emitting devices. Multiband kldrp is used, with corrections from drift diffusion and strain calculations. Results are discussed using an empirical tight...
Due to the downscaling of semiconductor device dimensions and the emergence of new devices based on nanostructures, CNTs and molecules, the classical device simulation approach based on semi-classical transport theories needs to be extended towards a quantum mechanical description. We present a simulation environment designed for multiscale and multiphysics simulation of electronic and optoelectronic...
Quantum dot (QD) systems based on III-nitride have recently shown to be very promising nanostructures for high-quality light emitters. In this work, electronic and transport properties of AlN/GaN QDs are investigated by means of the TIBERCAD software tool, which allows both a macroscopic and an atomistic approach, with the final aim to couple them in a multiscale simulation environment.
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