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Low-density parity-check (LDPC) codes which were proposed in 1962 [1] had been proved to approach the Shannon limit performance. Due to the superior performance, LDPC codes have got wide applications in information transmission and magnetic recording [2]. Meanwhile, good codes usually bear good performance, such as irregular quasi-cyclic LDPC[3], so it is valuable to study deeply the construction...
The ferromagnetically coupled ferroelectric domain walls (DWs), which may be more conductive, in multiferroic material BiFeO3 (BFO), make it possible to realize intrinsic multiferroelectricity in single phase material and open a chance for combining spintronics and ferroelectricity in multifer-roic systems.[1] From the aspect of conductivity, the conductive DWs will influence the macroscopic transport...
The Kondo effect, one of the most interesting topics in condensed matter physics, shows significant influences on the transport behaviors in magnetic tunnel junctions (MTJs).[1] As we know that there is a competition between electron tunneling and Kondo scattering in MTJs.[2] However, it is not clear how Kondo effect will affect the transport properties of a multiferroic tunnel junction (MFTJ), a...
The tuning of the microwave characteristics of soft magnetic metallic thin films, especially the anisotropy field and the damping mechanism, is an important issue in their high-frequency dynamics of soft magnetic thin films[1]. the ways to change the damping parameter are doping some non-magenetic compositions or diluting the ferromagnetic thin films with transition metal ele-ments[2], material. Another...
Magnetic thin films with Dzyaloshinskii-Moriya interactions (DMI) are receiving enormous interest because of recent developments in the understanding of DMI's role in controlling the efficiency of domain wall (DW) motion [1] and in creating magnetic skyrmions [2]. Recently, interfacial DMI has been proposed to be directly related to Rashba spin-orbit coupling at magnetic interfaces [3]. Based on this...
The pseudospark discharge is a form of low-pressure gas discharge capable of generating extremely high currents with short rise times by means of a unique hollow cathode structure [1-6]. A high-quality electron beam is generated during the later phases of the discharge process, which possesses high current density and brightness, as well as the ability to self-focus via ion channel focusing. This...
The development of UHV transmission technology brings longer transmission distance, higher towers and more complicated terrain along the transmission lines, which make the shunt performance of transmission line under lightning stroke more diversiform compared to conventional ones. This paper discusses the effects of factors, such as lightning current waveform, footing resistance, transmission line...
In this paper, we present adaptive tracking control designs for a class of constrained nonlinear systems with completely unknown constants. A Barrier Lyapunov Function (BLF) is adopted to protect this limit from being destroyed. By guaranteeing negative semi-definite of the BLF during the design process, we keep the constraint is not transgressed. Adaptive control is used to address the unknown constants...
This paper considers the problems of stability for continuous-time positive nonlinear systems with delay via T-S fuzzy modeling. Based on quadratic copositive Lyapunov-Krasovskii functions (QCLKFs) a simple sufficient condition of stabilityis is obtained, which is independent of the delay. Then, the proposed stability conditions are improved via high order relaxations in the QCLKF and its time derivative...
This paper, based on radial basis function (RBF) neural network, presents an novel adaptive robust controller for a class of strict-feedback uncertainty nonlinear systems to address the tracking problem. The proposed approach, takes advantage of RBF neural network approximation property to approximate system uncertainties, and utilizes adaptive backstep-ping techniques for eliminating the effects...
We report a novel approach to enable the fabrication of dielectric isolated FinFETs on bulk substrates by bottom oxidation through STI (BOTS). BOTS FinFET transistors are manufactured with 42nm fin pitch and 80nm contacted gate pitch. Competitive device performances are achieved with effective drive currents of Ieff (N/P) = 621/453 µA/µm at Ioff = 10 nA/µm at VDD = 0.8 V. The BOTS process results...
Strain engineering has been in the heart of CMOS technology for over a decade. However, the effectiveness of conventional strain elements, such as stress liners, embedded S/D stressors, and stress memorization, is significantly reduced when device gate pitch is scaled below 100 nm as needed for 14nm node and beyond. Substrate strain engineering, where the channel itself is formed out of a strained...
At present, many countries devote a lot of resources to develop “smart grid”, including Taiwan and China. To establish a smart grid industry at the ground of the back-end management system, the most important subsystems are the smart meter, meter data management system, and energy information communication technology. This study mainly applied the industrial portfolio matrix composed with the industry...
Tin-whisker induced failures have been one of the major concerns of using electronic components with Sn or Sn-rich lead free solder coated I/Os. In some applications, this risk can be mitigated by refinishing the lead-free finishes with conventional tin-lead coatings using a solder dipping process. However, the solder dipping process does not come without reliability risks of its own. In this paper,...
A novel subgridding scheme that hybridizes the recently developed unconditionally stable one-step leapfrog alternately-direction-implicit finite-difference time-domain (ADI-FDTD) method and the conventional finite-difference time-domain (FDTD) method is proposed. The conventional explicit FDTD method is applied to coarse mesh regions while the leapfrog ADI-FDTD method to locally subgridded mesh regions...
Three metal level 56nm-pitch Cu dual damascene interconnects in k2.7 low-k ILD have been demonstrated by using sidewall-image-transfer (SIT) patterning scheme to investigate the feasibility of the SIT process for sub 50nm-pitch technology node. 45nm-pitch line resistance (R) and capacitance (C) simulation are performed to estimate the R-C variation for double patterning schemes. The photoresist mandrel...
High-performance InAlN/GaN heterostructure by metal-organic chemical vapor deposition and field effect transistor with a nominal gate length of 0.2 μm on sapphire substrate were obtained. Low defects density and a high electron mobility of 1930 cm2/V·s were obtained for the heterostructure. The fabricated device exhibited remarkable RF characteristics, i.e. a cutoff frequency of 69GHz with the gate...
SiC:Er2O3 films with different ratios of SiC to Er2O3 have been deposited on p-type Si substrates by the magnetron co-sputtering technique fully compatible with current Si processing technologies. 1.54 µm electroluminescence from the structure of indium tin oxide (ITO)/n+-Si/SiC:Er2O3/p-Si with suitable ratios of SiC to Er2O3 was measured under forward biases.
A self-aligned via(SAV) process was employed to build 64nm pitch Dual-Damascene(DD) interconnects using a pitch split double exposure pattering scheme to form the Cu lines. TiN hardmask (HM) density and thickness were optimized to achieve the SAV process and DD structure build. We present STEM cross sections of the structures after TiN HM deposition, HM open and DD RIE to determine the minimum required...
This work demonstrates the building of 64 nm pitch copper single and dual damascene interconnects using pitch split double patterning scheme to enable sub 80nm pitch patterning. A self-aligned-via (SAV) litho/RIE scheme was used to create vias confined by line trenches such that via to line spacing is maximized for better reliability. An undercut free post RIE trench profile enabled the good metal...
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