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A back-end-of-line (BEOL) MEMS platform for a compact, high-precision pressure sensor was developed. A CMOS-LSI-integrated MEMS pressure-sensor chip (with a size of 0.72 mm2) was fabricated on the platform. The sensor provides both high accuracy and accommodates miniaturization. Its sensitivity offers design flexibility simply by changing the size of its MEMS capacitors. The pressure sensor is thus...
We proposed a multi-Vth transistor design for a body-biasing scheme to control threshold voltage Vth variation and power consumption for the 65-nm node and beyond. One of the biggest barriers in applying the body biasing to multi-Vth transistors that have a different body-biasing sensitivity was solved by using a Hf-based gate dielectric work-function modulation combined with a careful channel design...
In this paper, we describe newly developed multi-Vth transistors design scheme operable for body-biasing control for 65nm-node and beyond. The major issue of body-biasing control on system LSI comprising multi-Vth is that different Vth transistor exhibit different body-biasing sensitivities rendering body-biasing control scheme unfeasible. We have successfully solved the issue by Hf-based dielectric...
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