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In SOI devices heat evacuation is limited by a buried oxide layer. The consequence is the well known Self Heating (SH) phenomenon [1] [2] [3]. We have in depth analysed the corresponding thermal effects on static and dynamic modes and the implications for the device operation.
In this paper, we are dealing with consequences of the existence of parasitic bipolar[1] and kink effect[2] on transients occuring in SOI digital circuits. The two effects described below have been studied on NMOS transistors on SOI technology. To facilitate the acquisition of the different transients, we have used large transistors (7000??m for the first, and 100 ??m for the second) with nominal...
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