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Due to their extremely high electron mobility (mu), III-V materials are being investigated as channel materials for high performance NMOS. Although their small transport mass leads to high injection velocity (vinj), they have a low density of states (DOS) in the Gamma-valley, tending to reduce the inversion charge (Qinv) and hence reduce drive current. Furthermore, the direct band gaps of III-V materials...
Using the non-local empirical pseudopotential method (bandstructure), full-band Monte-Carlo simulations (transport), 1D Poisson-Schrodinger (electrostatics) and detailed band-to-band-tunneling (BTBT) (including bandstructure and quantum effects) simulations, the effect of uniaxial- and biaxial-strain, band-structure, mobility, effective masses, density of states, channel orientation and high-field...
The performance limits of ultra-thin body double-gated (DG) III-V channel MOSFETs are presented in this paper. An analytical ballistic model including all the valleys (Gamma-, X- and L-), was used to simulate the source to drain current. The band-to-band tunneling (BTBT) limited off currents, including both the direct and the indirect components, were simulated using TAURUSTM. Our results show that...
The performance limits of ultra-thin body double-gated (DG) III-V channel MOSFETs are presented in this paper. An analytical ballistic model including all the valleys (Gamma-, X- and L-), was used to simulate the source to drain current. The band-to-band tunneling (BTBT) limited off currents, including both the direct and the indirect components, were simulated using TAURUStrade. Our results show...
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