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Modern processing technologies offer a number of types of devices such as high-VT, low-VT, thick-oxide, etc. in addition to the nominal transistor in order to meet system performance and functional needs. While designers have leveraged these devices for mixed-signal design, a design framework is needed to guide designers in selecting the best set of devices. The same framework can enable device manufacturers...
A novel asymmetric Schottky tunneling source MOSFET is proposed in this paper. The main feature of this device is the concept of gate controlled Schottky barrier tunneling at the source. The STS MOSFET was fabricated using conventional processes combined with present NiSi technology. The device shows excellent short channel immunity, compared to conventional SOI MOSFETs. This improves the scalability...
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