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We have recently developed a sub-50nm gate length InP HEMT (high electron mobility transistor) process with a peak transconductance of 2000 mS/mm at 1V. A 3-stage single-ended common source 150-220 GHz MMIC LNA demonstrates greater than 20 dB gain at 200 GHz (> 7 dB gain per stage) and is >5 dB higher LNA gain compared to the same MMIC design fabricated on our baselined 70 nm gate length InP...
In this paper, we present the framework for developing the first working power amplifiers at sub-millimeter-wave frequencies. The technology is made possible by an advanced InP HEMT transistor. A three-stage power amplifier is presented, which uses a binary combiner to realize a total output periphery of 80 mum and demonstrates 12-dB gain at 335 GHz, making, this the first demonstrated sub-millimeter-wave...
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