The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This work demonstrates the isolation integrity between gate contact and source or drain contact with the variety of source/drain extension lengths. The trend of isolation capability not only linearly followed the extension length, but related to the formation of liner spacer. As the channel width (Wfin=0.11μm) was fixed, the IGD leakage at channel lengths Lg= 0.24, 0.16, and 10μm with LSDE= 160nm...
Fixing the doping dosage in VT implant process, as the doping energy is lower; contributing the good p-n junction controllability, the punch-through voltage (VPT) at 6keV doping energy is greater than that at 10keV, no matter what the long-channel devices are. This phenomenon is similar to the trend of the DIBL values for channel width = 0.12μm at 10keV are slightly larger than that at 6keV, too.
The DIBL effect is well-known in short-channel devices. Using this good effect, we can detect the device integrity with channel-length or -width variation and the channel punch-through effect, causing more leakage contributing the OFF current. As the channel width is increased at the long-channel lengths, the punch-through voltage (VPT) is also increased little due to the more uniformity of halo implantation...
Choosing a long source/drain extension length (LSDE) maybe effectively reduces the leakage between source/gate and drain/gate, but the S/D series resistance is increased and the drive current in p-channel FinFETs is suffered. Of course, the DIBL effect can be controlled well in device model and the channel punch-through effect also can be suppressed to decrease the standby current in ICs. Balancing...
The micro-loading effect in this work seems obviously. According to the extraction of drive current (IDS) for dense and isolated FinFET devices at the on-drawn layout (W/L=0.11/0.5 (μm/μm), the ratio with 11-fin fingers vs. single fin was 10.01. Using the re-work concept to derive the un-etching depth (ΔH) located at the inner sidewall fin height was still around 2.4 nm as the outer sidewall height...
Higher threshold-voltage (VT) doping energy provides the deeper influence to channel controllability. For drive current (IDS) consideration, the higher one demonstrates the larger IDS value, but the higher drop ratio at 125°C comparing the measurement results at channel width/channel length (W/L)=0.11/0.5(μm/μm). However, this phenomenon at W/L=0.11/2(μm/μm) is not distinct at room temperature and...
The drive current under the higher doping energy in threshold voltage (VT) adjustment shows the higher performance. Simultaneously, this consequence in VT shift under heating effect also reflects the same trend. The deviation ratios at 20KeV and 15KeV doping energies are about 26% and 28%, respectively. The subthreshold swing (S.S.) at higher doping energy is slightly lower than that at higher one...
Channels of FinFET are 3 dimensional fin-like structures which are thin enough to be fully depleted as the gate is appropriately biased leaving no leaky neutrally-charged leaky body. Different widths (fin thickness), different gate materials, and the Vt-adjustment using different implant energies are taken into account in this paper. It is then found that different fin thicknesses do affect the electrical...
The 3-D structural fin-like channels of FinFET suppress the leakage current as the sizes of devices get substantially shrunk. In this study, the fin-thickness effects on the electrical performances are mainly observed. Two different kinds of thickness (namely, 110nm, and 120nm) with the same channel length (0.1 micron) are put into comparison. The phosphorus implants of the same dose with different...
FinFET devices have the structure of 3-D fins as channels, which are capable of being fully depleted as the gate is biased and potentially suppress the leakage currents. In this paper, one compares poly-silicon gates with fully cobalt silicide gate to see how much they are affected by the fin widths. Two channel lengths (0.1 micron and 0.12 micron) at two different fin widths (namely, 110nm, and 120nm)...
The leakage current is suppressed on 3-D structural fin-like channels of FinFET as the sizes of devices get substantially shrunk. The devices with channel width/length (0.12μm/ 0.10μm) are focused on and the baseline device is taken to be 15KeV phosphorous ions (the precursor PH3) for N-well Vt implant and heavily doped poly-silicon for the gate. One is thus intrigued in what if the Vt implant energy...
Fin-FET is so expected because it protects Ioff current from outrageously leaky as the channel length gets shorten continuously. It thus keeps the threshold voltage and the swing from rolling-up. Those good characteristics are manifested by the fully depleted region and the lack of leaky body as the gate is biased. In this study, the fin-thickness effect is to be noticeably discussed. The correlated...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.