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TiN/HfO2/Pt resistive switching (RS) devices were fabricated with TiN top electrodes deposited in various Ar:N2 ambient. Strong relevance between ambient Ar:N2 ratio and electrical performance was demonstrated. This correlation was attributed to the difference in TiN crystal orientation, which has strong dependence on and can be controlled by ambient Ar:N2 ratio during deposition. Electrical measurement...
Al/CeOx/Pt based resistive random access memory (RRAM) devices were fabricated and investigated. The CeOx RRAM devices show self-compliance set switching without a requirement of high voltage electric forming process. Multilevel set and reset switching processes were observed in the CeOx RRAM devices. Based on the unique distribution characteristic of oxygen vacancies in CeOx films, the possible mechanism...
CMOS compatible Cu/SiO2/TiN-based resistive random access memory (RRAM) was fabricated and investigated. Unique self-compliance unipolar resistive switching (RS) was observed, as well as good retention and uniformity of resistance states. A physical model based on formation and rupture of Cu conductive filament (CF) is proposed, considering both thermal and electrical effect, and verified by experiments.
We report that the endurance degradation behaviors of transitional metal oxide (TMO) based resistive random access memory (RRAM) is dominated by three different steps and correlated with extra oxygen vacancy accumulation during SET/RESET switching process. The physical origin of endurance degradation due to the pulse voltage effect is verified by the measured data. The optimized operation schemes...
In this paper a compact model both for bipolar and unipolar resistive switching device is proposed. Basic I-V characteristics of RRAM are easily and correctly represented by this model. The model is verified by the bipolar RRAM experiment results. The model can be used as simple and fast tool to design and optimize RRAM.
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