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Multicarrier transport planar fully-depleted silicon-on-insulator MOSFETs has been investigated employing magnetic-field dependent geometrical magnetoresistance measurements and high-resolution mobility spectrum analysis. The results indicate that electronic transport in the 10 nm thick Si channel layer is due to two distinct and well-defined electron species. According to self-consistent Poisson-Schrödinger...
Magnetic-field-dependent Hall-effect measurements and high-resolution mobility spectrum analysis have been employed to determine electronic transport parameters in InAsSb-based nBn structures. Three samples were studied, with nominally identical epitaxial layer structure but with barrier layers of different compositions. Two separate well-defined electron species, associated with the two distinct...
Electron transport in n-type HgCdTe realised by Boron ion-implantation and inductively-coupled-plasma reactive-ion etching (ICP-RIE) of vacancy doped p-type HgCdTe has been investigated by employing variable magnetic field Hall-effect and resistivity measurements, coupled with high resolution mobility spectrum analysis (HR-MSA). Electron mobilities were found to be significantly higher in the ICP-RIE...
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