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Historically, the mobility of semiconductor charge carriers is treated as a single-valued function of temperature and other parameters such as the doping concentration. Such a description has been adequate for electronic devices with behaviors that are dominated by bulk carrier transport. Treating carrier mobility as a single valued function is consistent with conventional Hall measurements which...
Magnetic-field-dependent Hall-effect measurements and high-resolution mobility spectrum analysis have been employed to determine electronic transport parameters in InAsSb-based nBn structures. Three samples were studied, with nominally identical epitaxial layer structure but with barrier layers of different compositions. Two separate well-defined electron species, associated with the two distinct...
In this work, we report on the measurement of vertical transport parameters in p-doped InAs/GaSb type-II superlattices for long-wavelength infrared detectors. Since the Hall effect technique cannot be used for vertical transport measurements, a magnetoresistance approach has been used. The magnetore-sistance data was obtained at electric fields not exceeding 25 V/cm and magnetic fields up to 12T....
A study is presented of multi-carrier electronic transport parameters in HgCdTe films extracted through use of advanced mobility spectrum analysis techniques. It is shown that even in single layer long-wave infrared HgCdTe epitaxial films three well-defined electron species associated with the surface, bulk and substrate-interface regions can be accurately discriminated. Furthermore, it is also shown...
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