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An analytical model for the calculation of the threshold voltage for enhancement-mode (E-mode) ${p}$ -(Al)GaN high-electron-mobility transistors (HEMTs) is presented. The ON-state behavior (at low output voltages) of both ${p}$ -GaN HEMTs and ${p}$ -AlGaN HEMTs—including the gate injection transistor—are discussed in detail, and closed expressions for the threshold voltage ${V}_{T}$ of both devices...
Temperature dependent substrate ramp measurements on AlGaN/GaN power high-electron-mobility transistors (HEMTs) are used to extract information on charge redistribution in the buffer structure as a function of substrate bias. The measurements are compared to a theoretical model, representing the ideal capacitive buffer stack. It is found that at room temperature some negative charge is stored in the...
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