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Motivation and objectives: The technology of Mode-Locked Semi-Conductor Lasers (MLSCL) is a promising candidate for various space applications in the context of high-precision optical metrology, in particular for High Accuracy Absolute Long Distance Measurement (HAALDM). However very challenging performance requirements should be met for these applications: pulse duration<1ps, pulse repetition...
A DFB broad area laser, using an Al free active region structure, emitting at 976nm with low spectral width, below 1nm, and low wavelength evolution is reported, with an output power exceeding 3W.
With a single section ridge multi-quantum well laser diode having two spatial modes, we demonstrate mode locking and modulation bandwidth enhancement at 1580nm.
In low coherent light interferometry (OCT) broad bandwidth light sources are required to achieve high axial resolution. Here superluminescent light emitting diodes (SLEDs) utilizing quantum dot (QD) gain materials are promising devices as they unify large spectral bandwidths with high power at desired emission wavelengths. However, due to the spectral dot dynamics, dips in the optical spectrum occur...
New OCT systems demand higher resolution using broadband SLDs. This paper presents a new class of SLDs based on chirped multilayered quantum dots to achieve broad spectral widths. These SLD chips and modules operating around 1.1 mum and 1.2 mum have demonstrated wide optical spectra, low spectral ripples and dips allied with record output powers crucial for signal-to-noise performance for in vivo...
Life tests on our quantum dash lasers were carried out at 10 mW at 70 and 90degC. Highly stable static and noise characteristics prior and after 11200 hours of ageing tests are analysed.
1300 nm InAs quantum dot narrow ridge superluminescent diodes have reached a high power of 70 mW/facet under CW operation, together with a broad spectral width of 80 nm.
The modulation bandwidth has been identified as a specific limitation of quantum-dot or quantum-dash (QDash) lasers for direct modulation application. Solutions using tunnel injection and p-doping have already been demonstrated to increase the modulation bandwidth above 10 GHz, but with complex tunnel injection design and p-doping induced high internal losses. We show in this letter that the use of...
InP-based Fabry-Perot quantum dashes-in-a-well lasers were characterized in terms of noise performances, relative intensity noise and ageing profiles. The quantum dash lasers have demonstrated at 20°C and CW operation a high power of 40 mW/facet for 0.9 mm cavity length and a low RIN of about -159 dB/Hz, obtained at 100 MHz close to 40 mW/facet. The internal quantum efficiency and internal losses...
We have developed 1.55 μm quantum dash Fabry-Perot lasers based on InP using a ridge waveguide. These devices have first reached a high power of 50 mW per facet and have shown an ultra low relative intensity noise (RIN) of -162 dB/Hz ± 1.6 dB/Hz in 0.1-13 GHz range. After a laser structure optimization a RIN of -160 dB/Hz ± 2 dB/Hz was obtained from 50 MHz to 18 GHz. We are interesting in noise performances...
1.32 mum InAs quantum dot narrow ridge lasers have reached a record single spatial mode optical power of 130 mW/facet under CW operation. Furthermore we demonstrate a very low relative intensity noise of -159 dB/Hz plusmn2 dB/Hz in the 0.1-10 GHz range
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