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This paper reports on deposition process of Zinc Oxide (ZnO) using a simple electrochemical approach. The ZnO thin film was deposited on the Aluminium (Al) substrate in an aqueous solution of Zinc Chloride (ZnCl2) at room temperature using two terminals electrochemical cell that consisted of positive and negative electrodes. Two types of Al substrate were used, which are Al foil and Al plate. Al foil...
Investigation on metallic contact on porous silicon (PS) layers is typically important before final integration into application devices. The electrical characterization of Au thickness of 100 nm and ∼210 nm on ∼3 μm and ∼6 μm PS thickness on PS were studied by measuring the current-voltage (I-V) response. The PS layers of n-type oriented silicon (Si) wafer were prepared by electrochemical etching...
Research on heterogeneous integration system implementation for high-performance and low-power large scale integration (LSI) is in great demand and continues to grow. The co-integration of alternative materials such as Ge and III-V channels on Si substrate is essential in order to fully utilize the conventional Si CMOS platform. Thus, it opens up the feasibility of advance device technologies along...
Gallium Nitrides (GaNs) are considered as the most promising materials for liquid-phase sensor applications due to their chemical stability and high internal piezoelectric polarization [1–4]. In this work, the sensing responses of undoped-AlGaN/GaN two terminal devices upon exposure to various pH levels in aqueous solution (a mixture of HCl and NaOH) as well as their possible sensing mechanism have...
Several parameters such as doping concentration and crystal orientation of the substrate, electrolyte composition, applied current density and etching time play an important role in the electrochemistry of silicon [1–4]. However, illumination is another major parameter in Si etching process, particularly for n-type material [5]. In this paper, porous silicon (PS) structures were prepared under front-side...
In this paper, the sensitivity of GaN surfaces in aqueous solutions and polar liquids has been investigated. For this purpose, two terminal devices fabricated on bulk Si doped-GaN structures and undoped-AlGaN/GaN heterostructures with unpassivated open area are used to measure the responses to the changes of the H+ concentration in aqueous solutions and the dipole moment in polar liquids. Two material...
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