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Based on the fact that both the phase and amplitude characteristics of fractional capacitor are related to its order, the introduction of fractional capacitor will make power factor correction (PFC) more flexible compared with the one using conventional capacitor. In order to verify the PFC function with fractional capacitor, an equivalent fractional capacitor model composed of an inverter and a resistor...
In this paper, a novel flicker-free ac/dc LED driver without electrolytic capacitor is presented. The driver comprises a single-stage boost-forward converter and a bidirectional buck-boost converter, which serves to bypass the low frequency ripple. Therefore, electrolytic capacitor is no longer needed. Compared with other electrolytic capacitor-less topologies, the proposed driver has the advantages...
A low turnoff loss (Eoff) silicon-on-insulator lateral insulated gate bipolar transistor with p-buried layer and double gates (DG-PB SOI LIGBT) is proposed. The proposed LIGBT features a p-buried layer (PB) in the n-drift region and an additional trench gate. Due to the large capacitance effect and hole extraction path induced by PB, larger number of the carriers is removed under low anode voltage...
The active power filter (APF) which uses the pulse width modulation (PWM) technology brings switching harmonics in that is high-frequency current. These harmonics must be eliminated by the output filter between APF and grid. Due to the superior filtering properties of LCR while the impedance is fluctuating in grid, the LCR filter is widely employed. Therefore, the model in mathematical expression...
Magnetic coupled resonance Wireless Power Transfer (MCR-WPT) system has many advantages in mid-range power transfer applications. Class-E amplifier is a suitable high frequency power source for MCR-WPT system because it has merits of simple circuit structure and high conversion efficiency. However, the power transfer efficiency drops rapidly and class-E amplifier works in bad conditions because the...
Clock distribution becomes a challenge as clock frequency and chip size keep increasing at the same time. Meanwhile, the distributed effects of the clock channel often show up where clock frequency is high and/or it drives large capacitive loading. In these cases, a standing wave-based structure becomes an attractive technique to deliver a low-jitter clock over a long distance with low power consumption...
At data rates beyond 10Gb/s, most wireline links employ NRZ signaling. Serial NRZ links as high as 56Gb/s and 60Gb/s have been reported [1]. Nevertheless, as the rate increases, the constraints imposed by the channel, package, and die become more severe and do not benefit from process scaling in the same fashion that circuit design does. Reflections from impedance discontinuities in the PCB and package...
An improved trench insulated gate bipolar transistors (TIGBT), called the trench accumulation layer controlled insulated gate bipolar transistor (TAC-IGBT) is proposed. In this new device, the P base of the conventional TIGBT (CT-IGBT) is completely removed, an accumulation channel is incorporated. Numerical simulation results indicate that the structure has lower on-state voltage drop, larger latching...
Since it has a great height, large volume and complicated configuration, the 1000-kV ultra-high voltage surge arrester has a very nonuniform potential distribution, which leads to the depressed service life and low safe reliability. This paper proposed the three-dimensional FEM and circuit analytic method to analyze and improve the potential distribution of the 1000-kV surge arrester. An optimal grading...
The metal oxide arrester (MOA) is key equipment in high voltage power system. If the potential exerted on a ZnO disc is very high, it is more easily destroyed than others. Compared with GIS MOAs for 750 kV and below, the 1000 kV GIS MOA has greater height, larger volume and multiple columns, which leads to a very nonuniform potential distribution and makes the method to analyze the potential distribution...
An improved 3D tri-gate 4H-SiC MESFETs structure with recessed drift region was proposed. The recessed drift region of the proposed structure is to reduce the channel thickness between gate and drain to increase breakdown voltage as well as to eliminate gate depletion layer extension to source/drain to decrease gate-source capacitance. The DC and RF electrical characteristics of the proposed structure...
An improved 3D tri-gate 4H-SiC MESFETs structure with recessed drift region was proposed and its DC and RF electrical performances were studied by numerical simulation. The recessed source/drain drift region of the proposed structure is to eliminate gate depletion layer extension to source/drain to decrease gate-source capacitance as well as to reduce the channel thickness between gate and drain to...
A novel zero-voltage zero-current transition (ZVZCT) soft-switching cell was presented in this paper. Based on the soft-switching cell, novel ZVZCT PWM converter family was built. The converter family has such advantages as zero-voltage zero-current switching in main switch, zero-current turn-on and zero-voltage zero-current turn-off in auxiliary switch, zero-current zero-voltage turn-off and zero-voltage...
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