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A qualitative assessment of the accuracy for different de-embedding methods is presented in this paper. For the realization of this work, four procedures are analyzed. The open, short, open-short and multiline methods are applied to S-parameters measurements of four microstrip lines and dummy structures. The samples are fabricated on silicon substrate and have the same cross section, but differ in...
This paper presents a systematic methodology to characterize and model on-chip inductors, built over a ground shield, directly from S-parameter measurements. Excellent model-experiment correlation is achieved up to 50 GHz for the circuit network parameters as well as for the Q-factor.
Parasitic series resistances and mobility degradation are limiting the development of advanced MOSFETs. We review, scrutinize, and critically compare five parameter extraction methods that use DC data measured from a single test device. The use of a single device facilitates individual characterization and avoids the impact of device-to-device model parameter variation that affects other common methods...
Closed-form expressions for the capacitance and inductance related to vias (vertical transitions) in interconnects implemented in PCB technology are presented. The importance of this contribution relies on the fact that these parasitic effects critically impact the performance of data channels by introducing undesired signal reflections. The development of the proposal is based on the systematic analysis...
In this paper, the extraction of the relative permittivity from transmission line measurements by neglecting and considering the metal losses is performed. It is observed that the extracted permittivity obtained in both cases allows to achieve good model-experiment correlation for S-parameters. However, when performing time-domain simulations, if the contribution of the metal losses on the phase delay...
This paper presents a glimpse of academic collaboration between countries in Latin America and the rest of the world, offering specific examples in the fields of RF and Microwave Engineering. It then lists a series of funding and networking mechanisms which can be tapped to further strengthen ties and form solid, long-lasting networks.
This paper discusses key issues related to the design of large processing volume chip architectures and high speed system interconnects. Design methodologies and techniques are discussed, where recent trends and considerations are highlighted.
The determination of parameters for microwave MOSFETs using DC methods requires that the effect of the biasdependent S/D resistances be removed. This becomes more important as technologies evolve, since this procedure becomes less straightforward. If not taken into account, incorrect values for the basic parameters for the MOSFET are obtained, especially those associated with the channel. To solve...
Multi-Finger MOSFETs are used to decrease the gate resistance in order to improve microwave-operation figures-of-merit such as the maximum frequency of oscillation. Even though the effect of splitting the gate electrode on the associated resistance has been extensively analyzed, the corresponding influence on the source-drain resistances has not been the subject of much research. We herein present...
An analytical methodology for characterizing signal launchers for differential microstrip lines is presented in this paper. The methodology is formulated using the modal domain (i.e., differential and common mode) and ABCD matrices obtained from S-parameters measured to two lines differing only in length and terminated with Ground-Signal-Signal-Ground (GSSG) configured pads. Excellent correlation...
An analysis of the level of hot carrier (HC) degradation caused in sub-100 nm n-type MOSFETs operated from DC up to 20 GHz, is introduced. The analysis comes accompanied with experimental results. The degradation process is done through the application of controlled DC currents at well defines periods of time. The recorded S-parameters before and after DC degradation allows the observation of the...
This paper presents a systematic methodology for characterizing and modeling on-chip inductors over a lossy substrate directly from S-parameter measurements. The model implementation neither requires precise knowledge of geometry or fabrication process. This eases the representation of inductors in SPICE-like simulators at high frequencies. Excellent model-experiment correlation is achieved up to...
A comparison of Y-parameters and S-parameters methodologies for the calculus of the quality factor (Q) in integrated inductors, is analyzed in this paper. For this reason two inductors are compared, one with low (planar inductor) and another with high (cross inductor) electric field coupling effects, in order to determine its influence on the Q calculus. The experimental results shows that assumptions...
A complete methodology to characterize substrate integrated waveguide (SIW) structures from S-parameter measurements is presented. We determined the complex propagation constant, the characteristic impedance of a homogeneous section of waveguide, and the efficiency of different adapters used to launch the signals into the waveguide. After a detailed analysis, it is observed that the most significant...
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