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In this paper we have demonstrated a 50 nm n-channel gate stack undoped drain double gate tunneling field effect transistor (DG-TFET), for which the simulation shows significant improvements compared with gate stack double gate tunneling field effect transistor. The curves have been checked for both negative and positive gate bias state and also to check for the ON-State and am-bipolar state performance...
In this paper we propose a reduced channel AlGaN/GaN HEMT with high current densities and high frequency. Cut-off Frequency of 150 GHz has been obtained at V gs = −1 V. The device characteristics have been studied in details with variation in process parameters. The second part of the paper consists studying the linearity performance of the GaN HEMT for radio frequency application. Linearity parameters...
In this paper we propose a simulation model of 18 nm AlGaN/GaN high electron mobility transistor capable of operating at high voltages and in terahertz regime. The HEMT structure has been designed on a sapphire substrate and two GaN layers and three AlGaN layers have been used. Silicon Nitride has been used for passivation. Electrical characteristics if the device had been obtained for a wide range...
This paper studies the Silicon Tunneling Field Effect Transistor (TFET) where p-i-n configuration of doping has been used. The device has been compared with the emerging GAA Nanowire FET for drain current characteristics. The characteristics of sub threshold region has been studied for different radii and gate lengths of the device. The surface potential of the device has also been studied along with...
Owing to the large increase number of transistors in the CMOS logic due to the unending demand for increase in speed of electronic devices and also low power consumptions, it is becoming difficult to incorporate all the small scaled transistors onto one single plane. Nanowire transistors are now been looked upon to mitigate this particular problem due to their small size and excellent gate control...
Scaling down of the semiconductor devices from micro to Nano scale has now become the trend for the electronics industry and it is the only hope that can ensure lesser power consumption and also reliability. Ultra thin MOSFET's, Double Gate MOSFET's, FINFET and now the latest development is the Nanowire FET. The nanowire FET is a revolutionary device as the gate is all around the channel which provides...
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