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Multi-carrier transport in planar fully-depleted silicon-on-insulator (FD-SOI) MOSFETs has been investigated employing magnetic-field dependent geometrical magnetoresistance measurements and high-resolution mobility spectrum analysis. The results indicate that electronic transport in the 10nm thick Si channel layer is due to two distinct and well-defined electron species. Although self-consistent...
Multicarrier transport planar fully-depleted silicon-on-insulator MOSFETs has been investigated employing magnetic-field dependent geometrical magnetoresistance measurements and high-resolution mobility spectrum analysis. The results indicate that electronic transport in the 10 nm thick Si channel layer is due to two distinct and well-defined electron species. According to self-consistent Poisson-Schrödinger...
High-resolution mobility spectrum analysis has been employed to study the magnetic-field dependent geometrical magnetoresistance characteristics of planar FD-SOI MOSFETs with 10 nm thick transistor channel layer. It is shown that transport in the Si channel is due to two well-defined electron species. According to self-consistent Poisson-Schrdinger calculations, these species correspond to carriers...
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