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The ultra-low gate charge characteristics and low gate voltage limitation of a GaN enhancement mode HEMT in combination with stray circuit elements poses many challenges of driving them in power electronic applications. This paper investigates the effect of changing gate resistances and including a Zener diode for overvoltage protection in the gate circuit. The goal is to achieve low switching losses...
This paper investigates the switching performance of a 1.2 kV half-bridge SiC MOSFET module from Sanrex. Unlike in a standard SiC MOSFET module, where the MOSFET and the anti-parallel diode chips are fabricated separately, in the chosen MOSFET module (FCA150XB120), both the MOSFET and the diode are fabricated on a single chip. The device is characterized under both hard and soft switching conditions...
This paper investigates the switching performances of two state-of-the-art half-bridge SiC MOSFET modules using a standard double pulse test methodology. A deliberate choice of the modules with the same voltage and current ratings, the same packaging, but different stray inductances and capacitances is made in order to give an insight into the influence of parasitics in the switching transients and...
This paper investigates the soft switching performance of a 1.2 kV half-bridge SiC MOSFET module, FCA150XB120 from Sanrex. The selected module has both MOSFET and diode integrated on a single chip. A single pulse control circuit is employed in a half-bridge series resonant inverter topology with a split dc-link and an LC load in order to emulate a real inverter operation. This results in a square...
In this paper, a comparative performance evaluation of a 1.2 kV SiC MOSFET module and a 1.2 kV Si IGBT module is carried out under a series of different conditions such as similar dv/dt, di/dt, voltage overshoot, current overshoot, and ringings. Both the modules are commercially available in a standard plastic package and have the same stray inductances. Various parameters such as switching speed,...
In this paper, the switching performances of two state-of-the-art half-bridge SiC MOSFET modules are evaluated using a standard double pulse test methodology. The selected modules are commercially available, and have the same voltage and current ratings. A comparative study is carried out under various conditions such as similar dv/dt, di/dt, and current and voltage overshoots. Additionally, the lab...
This paper investigates the switching performance of six-pack SiC MOSFET and Si IGBT modules for motor drive applications. Both the modules have same packaging and voltage rating (1.2 kV). The three bridge legs of the modules are paralleled forming a single half-bridge configuration for achieving higher output power. Turn-on and turn-off switching energy losses are measured using a standard double...
This paper explains the importance of low inductive busbar for utilizing the fast switching feature of SiC modules. A 3D FEM model of the busbar is built using Ansys Q3D extractor. The simulation results give insight into the physical behaviour of the current flow which aids in the identification of the parts of the structure that must be considered coplanar. The simulated busbar inductance is compared...
In this paper, the switching performance of a six-pack SiC MOSFET module (CCS050M12CM2) is investigated experimentally using a standard double pulse test method. The upper three and the lower three MOSFETs of the CCS050M12CM2 are paralleled forming a half-bridge configuration. Moreover, the performance comparison of the CCS050M12CM2 is carried out with a pin to pin compatible Si IGBT module (FS75R12KT4_B15)...
In this paper, the impact of using parallel SiC MOSFETs as the switching device is investigated. Measurement considerations for a double pulse test are discussed, and the influence of the load inductor characteristic and the voltage measurement technique on the measurement results is demonstrated. It is shown that the inductor load can produce high frequency oscillations of up to 10 % of the load...
The development of an outdoor test station for accurate in situ I-V curve measurements of photovoltaic (PV) modules is described. The modules are installed in an open-rack configuration at the University of Agder in Southern Norway. Seven new and three aged PV modules of different type and make are being tested, including mono-and multicrystalline silicon from differing manufacturing routes, triple-junction...
This paper presents a method for power loss analysis applied on single-phase grid-connected PV inverter. The often neglected current ripple effects are included in power device switching and conduction losses. The relationships amongst component losses, output inductance, switching frequency and dc-link voltage are investigated. It is shown that current ripple effect is important to power loss analysis...
The paper concerns simulation of photovoltaic systems. First, the characteristics of a real photovoltaic module, based on real life measurements, are presented. The peculiar behavior that is due to partial shading and bypass diodes is pointed out. Then a PSpice computer model is outlined, and the computer simulations serve to understand the observed behavior. On this background, the paper presents...
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