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3-D integration typically involves multiple chips stacking with large numbers of interconnections within each chip. There are several fundamental technology challenges that need to be addressed in order to realize 3-D integration, such as Cu through-silicon via (TSV) expansion, transistor degradation or open failures on Cu contamination, microbump stress, and so on. The reliability issues on TSV and...
This paper reports on the development of packaging technology for the assembly of 30µm pitch micro Cu pillar bump (15µm diameter) on organic FCCSP substrate having bare Cu bondpad without NiAu or OSP surface protection. The assembly was performed by thermal compression bonding (TCB) with non-conductive paste (NCP). Finite element modeling and simulation were carried out to understand the Cu pillar...
Silicon carbide based power modules are receiving more attention due to their performance advantages over traditional silicon power modules. The demanding operation requirements such as higher power output, faster switching speed, and higher working temperature present great thermal management challenge, which necessitates the analysis and characterization of various thermal interface and bonding...
The assembly capability of 30μm ultra-fine pitch Cu pillar flip chip interconnect on a two-layer FCCSP organic substrate with a chip size of 8mm × 8mm × 0.1mm chip was demonstrated by using thermal compression bonding with non-conductive paste (TCB-NCP) to mitigate the issue of coefficient of thermal expansion (CTE) mismatch between silicon chip and organic substrate. A method, developed to quantify...
Integrated Circuited devices fabricated on SiC instead of Si allows higher operating temperatures for the future automotive, aerospace, and green and renewable energy industry. With higher temperature interfaces and contacts between the chip and package, new packaging interconnection materials able to sustain high temperature operations need to be explored. This work demonstrates the assembly of a...
The cracking of the brittle ultra low-k dielectrics on advanced node silicon devices is a great concern for assembly processes. It is attributed mainly to various combinations of the Chip-Package-Interaction (CPI) effect. This challenge is further amplified by the adoption of Cu pillars to replace conventional solder bump flip chip interconnects as device bump pitch shrinks and the demand for higher...
Room-temperature die-attach bonding using ultrasonic energy was evaluated on Cu/In and Cu/Sn-3Ag metal stacks. The In and Sn-3Ag layers have much lower melting temperatures than the base material (Cu) and can be melted through the heat generated during ultrasonic bonding, forming intermetallic compounds (IMCs). Samples were bonded using different ultrasonic powers, bonding times, and forces and subsequently...
Realization of 3D IC packaging is mainly depends on the success of fine pitch micro bump bonding process for thin chips stacking and reliability of micro bump interconnections between stacked chips. The uniformity of micro bumps is the critical requirement to achieve good micro bump bonding, and the chip warpage during bonding and underfilling of micro gaps between stacked chips is key challenge in...
Conventional flip chip bonding requires heating process to enable solder to melt and electrically conductive adhesives to cure. Applying ultrasonic dose, successful flip chip bonding can be achieved at lower temperatures and bonding pressures. Using ultrasonic flip chip bonding is attractive as the reduction in bonding temperature reduces processing time, by reducing time taken for ramping up and...
A low temperature <200°C Cu-Cu bonding process is developed for 3D IC stacking application. To prepare and activate good copper surface, three planarization processes and two surface treatment methods are studied in details and compared. Best surface treatment method is identified. It is found that good Cu-Cu direct bonding with high shear strength is achieved by the developed process and verified...
Flip chip bonding of chips coated with wafer-level underfill over optically transparent glass substrate allows ease of inspection of flip chip bonding quality immediately, without the use of equipment such as SEM, CSAM or the need for highly-trained staff to interpret results. This method is inexpensive to implement, while intuitive to the engineer identifying responses to parametric changes in the...
Industry is adopting three-dimensional integration of Cu-low k Chip with micro-solder bumps by stacking process to increase the functionality and performance of the device. Cu/low k is known to be very fragile and required special packaging process to prevent early delamination issues. Stacking of thin chips with micro-solder bumps need to be carried out without causing solder squeezing, solder non-wetting...
Au-rich eutectic AuSn (Au80wt%-Sn20wt%) solder ball alloy is extensively used in MEMS and optoelectronics packaging, for providing flip-chip solder bump interconnections. In this paper, we will look into the possibility of using laser solder ball jetting process for direct eutectic AuSn solder bumping on Al bond pad surface, and compare with eutectic AuSn solder bumping on Al bond pad with Ti/Ni/Au...
Industry is adapting micro-bumps in the device structures in order to having module with multiple functions and capabilities within smaller area. Micro-bumps is coated with Tin (Sn) cap to facilitates solder interconnects formation between the chip and substrate. Electrochemical migration failure is a known issue related to flux residue on the solder joints after the thermal compression of the chip...
This paper reports an implantable blood flow sensor system integrated on flexible circuit that consists of pressure sensor and inductively powered wireless sensor interface Application Specific Integrated Circuit (ASIC) for early graft failure detection application. The proposed system was embedded within the vascular graft to have continuously monitoring the differential blood pressure change as...
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