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First demonstration of simultaneous frequency doubling and frequency quadrupling of a pulsed carbon-dioxide laser in a single-grating orientation-patterned Gallium Phosphide crystal grown by hydride vapor phase epitaxy is reported.
The first temperature-dependent Sellmeier equation for GaP was fit to extensive refractive index data measured on thin GaP plates for wavelengths between 1 and 12 microns over a temperature range of 200 to 450K.
First demonstration of frequency doubling of a continuous-wave carbon dioxide laser using hydride vapor phase epitaxy grown orientation-patterned gallium phosphide is reported. Temperature dependence of second harmonic power was determined.
We report room temperature frequency doubling of a continuous-wave carbon dioxide laser tuned from 9.26 to 10.65 micrometers using large-aperture OPGaAs crystals (>3 mm thick by >7.5 mm wide) in fan-out and single grating configurations.
More than 2 Watts of continuous-wave external power at 3400 nm was obtained by difference frequency mixing of 1064.6 nm and 1549.8 nm fiber lasers in a periodically poled lithium niobate crystal at 50 °C.
The metal-insulator transition in vanadium dioxide thin films implanted with O + ions was studied. Ion implantation lowered the metal-insulator transition temperature of the VO 2 films by 12 °C compared to the unimplanted ones, as measured both optically and electrically. The lowering of the transition temperature was accomplished without significantly reducing the mid-wave infrared...
V 2 O 3 films and Cr-doped V 2 O 3 films were grown on (0 0 0 1) (C-plane) and (1 1 2¯ 0) (A-plane) oriented sapphire substrates by the reduction of sol–gel derived vanadium oxide films. Examination by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and atomic force microscopy showed the films to be comprised of highly oriented grains...
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