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Cobalt silicide has been used in ULSI process from 180nm to 90nm node and beyond. As a conventional self-aligned silicide process procedure [1], cobalt is firstly deposited on cleaned silicon surface, then annealed (450∼600° C) to produce Co2Si or CoSi with resistivity around 100∼150Ω cm. A Hydrochloric and Hydrogen Peroxide Mixture (HPM) was used to strip the unreacted cobalt film from dielectric...
Ion implantation is a widely used technology in current ULSI process. Spot beam and parallel ribbon beam are the most commonly used as ion beam in batch wafer type or single wafer type ion implanter. As spot beam batch type ion implanter has been used over recent decades, parallel ribbon beam single type ion implanter emerges excellent performance such as beam angle accuracy, defects, contamination,...
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