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It is projected that hundreds of cores can be integrated into a chip at the sub-20nm technology nodes. However, some challenges exist in the many-core architecture such as maintaining memory coherence, underutilized parallelism, and increased inter-core communication delay. This work proposes the data-center-on-a-chip (DCoC) paradigm employing virtualization technologies commonly used in today's data...
FinFET devices have been proposed as a promising substitute for conventional bulk CMOS-based devices at the nanoscale due to their extraordinary properties such as improved channel controllability, a high <sc>on</sc>/<sc>off </sc> current ratio, reduced short-channel effects, and relative immunity to gate line-edge roughness. This brief builds standard cell libraries for the...
FinFET device has been proposed as a promising substitute for the traditional bulk CMOS-based device at the nanoscale, due to its extraordinary properties such as improved channel controllability, high ON/OFF current ratio, reduced short-channel effects, and relative immunity to gate line-edge roughness. In addition, the near-ideal subthreshold behavior indicates the potential application of FinFET...
This paper presents FinCACTI, a cache modeling tool based on CACTI which also supports deeply-scaled FinFET devices as well as more robust SRAM cells. In particular, FinFET devices optimized using advanced device simulators for 7nm process serve as the case study of the paper. Based on this 7nm FinFET process, characteristics of 6T and 8T SRAMs are calculated, and comparison results show that under...
Sub/near-threshold computing has been proposed for ultra-low power applications. FinFET devices are considered as an alternative for bulk CMOS devices due to the superior characteristics, which make FinFET an excellent candidate for ultra-low power designs. In this paper, we first present an improved analytical FinFET model covering both sub- and near-threshold regimes. This model accurately captures...
Operating circuits in the near/sub-threshold regime can lower the circuit energy consumption at the expense of lowering the circuit speed. In addition near/sub-threshold can result in higher sensitivity to process-induced variations and transient noise. FinFETs have been proposed as an alternative to planar CMOS devices in sub-20nm CMOS technology nodes due to their more effective channel control,...
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