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Interfacial delamination between backside of TSV thin wafer silicon, low temperature PECVD silicon nitride and UBM (under bump metallurgy) layer under room temperature and thermal cycling or processing have been investigated in this paper. FEA (Finite element analysis) was used to assessment the thermal stresses and the driving force of thin wafer bump UBM delamaination. The 3D modeling results were...
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