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A complete static and low frequency noise characterization of ultra-thin body InAs MOSFETs is presented. Characterization techniques established for Si MOSFETs are applied in order to extract the electrical parameters and study the behavior of these research grade devices.
In this study, InAs metal-oxide-semiconductor field effect transistors (MOSFETs) ultra-thin body (UTB) were fabricated with self-aligned method. 4 nm thick Al2O3 gate oxide was deposited by Atomic Layer Deposition (ALD) technique. Ni-alloyed ohmic contacts for n-type source and drain (S/D) regions were formed at low annealing temperature (250°C). We developed a special shape based on the vertical...
Nanosuspension based on melt-quenched arsenic sulfide of nominal As_{55}S_{45} composition was prepared by nanomilling and tested as potential anticancer drug. Polyvinylpyrrolidone was used as steric stabilizer and inhibitor of agglomeration. Individual nanoparticles had average size of 192 nm (determined by photon cross-correlation spectroscopy) and had several times better dissolution ability in...
AimTo investigate an interaction between the calcium and sulphide signalling pathways, particularly effects of the slow H2S release donor morpholin‐4‐ium‐4‐methoxyphenyl‐(morpholino)‐phosphinodithioate (GYY4137) on the expression of inositol 1,4,5‐trisphosphate receptors (IP3R) with the possible impact on the apoptosis induction in HeLa cells.
MethodsGene expression, Western blot analysis, apoptosis...
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