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In this paper, we have analyzed the temperature dependent average IR-Drop and delay of side-contact multi-layer graphene nanoribbon (MLGNR) based power interconnects. The above analysis has been performed using our previously developed model using 16nm ITRS technology node. For a temperature ranges from 150K to 450K, the variation of resistance of MLGNR interconnect is ∼2–5× lesser than that of traditional...
In this work, the temperature dependent equivalent model for graphene nanoribbon (GNR) based nanointerconnect is developed. Using this model, we have investigated the frequency response of GNR as a function of temperature for 16nm technology node. The effective mean free path (MFP) is calculated for different temperature and then the resistance of GNR interconnect is calculated. It is observed that...
The current article represents a delay optimization model of multi layered graphene nanoribbon (MLGNR) and Cu based nanointerconnects using wire sizing method. Using this model, the delay analysis for different interconnects width (8nm, 11nm, 16nm ITRS technology node) and length is performed. The novelty in our work is that this is the first time a delay optimization model for MLGNR and Cu interconnects...
The work in this paper presents analysis of graphene nanoribbon (GNR) as nano-interconnect for radio-frequency (RF) VLSI circuits for 16 nm technology node. A frequency dependent electrical equivalent model is developed by calculating the circuit parameters based on interconnect geometry. Using the developed model the RF performance of GNR based interconnects is investigated and compared to that of...
Carbon Nanotube (CNT) has become the promising candidate for replacing the traditional Copper (Cu) based interconnect systems in future technology nodes. This paper presents an analytical model for timing and crosstalk in the CNT based nano-interconnect systems. The proposed model is compared with SPICE and it is found that the proposed model is 100% accurate with respect to SPICE and in an average...
The work in this paper analyzes the applicability of carbon nanotube (CNT) as the interconnect for radio-frequency (RF) VLSI circuits. An RF model is developed by calculating the frequency dependent circuit parameters based on interconnect geometry. Using the developed model the RF performance of CNT based interconnects is investigated and compared to that of copper based interconnects for future...
This paper presents a detailed analysis of the power supply voltage (IR) drop in sub-nanometer designs for local, semi-global, and global lengths. The IR drop in carbon nanotube (CNT) based power interconnects is analyzed and their effects on the timing delay have been investigated. It is shown that the CNT based power interconnects have significantly less IR-drop in comparison to that of Cu based...
This paper analyses the crosstalk effects in carbon nanotube (CNT) interconnect, and its impact on the gate oxide reliability. Using the existing models of CNT, circuit parameters for the single-wall CNT-bundle and multiwall CNT interconnects are calculated and the equivalent circuit has been developed to perform the crosstalk analysis. The crosstalk-induced overshoot/undershoots have been estimated...
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