The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This study investigates the effect of the Gate-to-Source/Drain overlap structure of a GaN Schottky Source/Drain MOSFET. The Gate-to-Source overlap structure of the device allows the gate electric field to reduce the height of the Nickel(source)–GaN Schottky barrier near the SiO 2 –GaN interface at the source side, injecting more thermionically generated carriers over the partially reduced...
GaN MOSFET source/drain fabrication techniques have been under extensive research, and Ion Implantation (II) and selective area regrowth (SAG) methods have shown the best performance. As an alternative for S/D of GaN MOSFETs beyond II or SAG, the use of metal for S/D of GaN MOSFETs (or Schottky barrier GaN MOSFET) has been proposed. While a Schottky metal source/drain presents several potential technological...
The dynamics of the threshold voltage calculation is evaluated for the tri-gate architecture of device. The 3-D poisson’s equation with eight boundary conditions is solved analytically and an analytical threshold model for tri-gate Si MOSFET device is developed. TCAD simulation result of the same device structure is also presented and it agrees well with our threshold analytical model. Furthermore,...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.