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In this paper we present the engineering of a non-volatile 1S1R memory based on a Phase-Change Memory cell (PCM), consisting in a GeN/Ge2Sb2Te5 layer, stacked with a GeSe-based Ovonic Threshold Switching selector device (OTS). We optimize and analyze separately the two devices, and we propose for the first time an innovative reading strategy of the cross point device, enabled by the improved sub-threshold...
The quest for the universal memory has been pursued since several years, but as far results from scientific literature do not declare one single technology able to fit all the requirements of the memory hierarchy. Flash and DRAM cover more than 95% of the global sales in the semiconductor memory market [1], but none of the two is able to substitute the other. This appears to be true also for disruptive...
In this paper, the evolution, limits and challenges of charge-storage Silicon Non Volatile Memory technologies are presented, with a special attention for 3D architectures. Then, new resistive memory technologies are introduced. Main principles, challenges and opportunities are discussed. In particular, an overview of our recent research work on phase change memory (PCM) and metal oxide resistive...
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