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A nitridation treatment technology with a urea/ammonia complex nitrogen source improved resistive switching property in HfO2-based resistive random access memory (RRAM). The nitridation treatment produced a high performance and reliable device which results in superior endurance (more than 109 cycles) and a self-compliance effect. Thus, the current conduction mechanism changed due to defect passivation...
We propose graphene oxide (GO) poly(3,4-ethylenedioxythiophene): polystyrene sulfonate (PEDOT:PSS) as new resistive memory material for non-volatile bipolar resistive switching memories, GO-PEDOT:PSS composites show great potential for resistance-change use in high density flexible nonvolatile memories. Repetitive high-speed switching, low switching voltage (about ±1–3V), tight distributions of HRS...
In this paper, a memristor with structure of Ag/ PEDOT:PSS/ Ta was fabricated and measured at room temperature. The conductance of the device decreased continuously as the consecutive negative voltage scanning. But for positive voltage sweeping, the conductance value reduced initially then increased, which was quite different from previous reported experimental results. The relaxation phenomenon was...
In this paper, a memristor with structure of Cu/ PEDOT:PSS/ Ta was fabricated at room temperature. The conductance could be modulated incrementally by pulse sequences. The amplitude, width, frequency and quantity of the pulse sequence play important roles in conductance variation, which is similar to the weight of synapses. Several important synaptic learning behaviors such as short-term potentiation...
We report a novel resistive random-access memory (RRAM) device with a graphene oxide (GO) composite film embedded with TiO2 nano-particles as its resistive switching layer. The efficient physi-(or chem-) sorption of TiO2 endows the GO/TiO2 composites with superior bipolar resistive switching behaviors, including low switching voltage (about ±1V), tight distributions of HRS and LRS, long retention...
We report an efficient one-step approach to reduce and functionalize graphene oxide (GO) during the in situ polymerization of phenol and formaldehyde. The hydrophilic and electrically insulating GO is converted to hydrophobic and electrically conductive graphene with phenol as the main reducing agent. Simultaneously, functionalization of GO is realized by the nucleophilic substitution reaction of...
Tetrapod-shaped zinc oxide (T-ZnO) whiskers and boron nitride (BN) flakes were employed to improve the thermal conductivity of phenolic formaldehyde resin (PF). A striking synergistic effect on thermal conductivity of PF was achieved. The in-plane thermal conductivity of the PF composite is as high as 1.96Wm −1 K −1 with 30wt.% BN and 30wt.% T-ZnO, which is 6.8 times higher than that...
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