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We report a novel resistive random-access memory (RRAM) device with a graphene oxide (GO) composite film embedded with TiO2 nano-particles as its resistive switching layer. The efficient physi-(or chem-) sorption of TiO2 endows the GO/TiO2 composites with superior bipolar resistive switching behaviors, including low switching voltage (about ±1V), tight distributions of HRS and LRS, long retention...
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