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Three-Dimensional (3D) integration of group III–V compound semiconductor devices on silicon (III–V/Si) is important for next-generation microsystems such as Si photonics or ultra-high-frequency electronics. We proposed a new “Chip-on-Wafer Direct Transfer Bonding” (CoW DTB) technology for III–V/Si applications. The technology concept was demonstrated using newly developed equipment and bond evaluation...
Three-Dimensional (3D) integration of group III-V compound semiconductor material on Si wafer (III-V/Si) is important for next-generation microsystems such as Si photonics or ultra-high-frequency electronics. A technique for direct bonding of III-V chips on a large-diameter Si wafer is an attractive approach for manufacturing these structures, but there is a difficulty in that ultra-clean particle-free...
Bonding technology of Si wafer for vacuum seal is important in MEMS. We have tried the vacuum seal using surface activation bonding without any binder. It is the ultimate bonding technique and gives the precise dimension due to the direct contact. The technique is, however, not easy. We have investigated the surface conditions in order to achieve the bonding. The surfaces cleaned by Ar ion beam bombardment...
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