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In this paper, we introduce a new compact model of the parasitic resistance of a FinFET with a hexagonal-shaped raised source–drain (S/D) structure. In contrast to previous models that divided the extrinsic S/D region into three parts, we redefined the region boundaries and modeled them as a series connection of accumulation resistance, gradient resistance, bulk resistance, and contact resistance...
In this paper, analytical gate fringe capacitance model of FinFETs including metal contact and raised source and drain (RSD) are developed. Each cross capacitance models are derived using conformal mapping and field integration. The proposed models are verified with a three-dimensional field solver, Raphael. By including the additional fringe capacitance from RSD and metal contact in BSIM-CMG platform,...
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