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Integration density is a major drawback of today's associative memories required for intelligent data processing for such as pattern recognition or classification. Ultra dense complementary resistive switch-based architectures are thought to overcome this issue, offering a footprint of 4F2. Here we demonstrate the feasibility of an 8 by 16 associative capacitive network.
Resistive Random Access Memory (RRAM) is a promising candidate for future beyond Flash-technology memories. Beside memory applications RRAM provides opportunities for neural networks, e.g. assembled as a complementary resistive switch (CRS). CRS cells feature a nondestructive readout scheme which can be used as an associative capacitive network (ACN) for fully parallel pattern recognition. ACNs are...
The integration of microelectronics goes progressively on, and memory devices are now based on processes on the atomic scale. Thus, quantum size effects become relevant. Here we report on quantized conductance values in SiO2 based resistive switches (ReRAMs) at room temperature. We modified the extended memristor model to account for quantum size effects. Our aim is to quantify and predict the impact...
Redox-based resistive switching devices have attracted great interest for future nonvolatile memory application. The electrochemical metallization memory (ECM) cell is one variant of these devices. One issue is the variability of the resistive switching in ECM cells. Thus, statistical models that capture the variability of ECM cells are required to enable circuit design. This works presents a statistical...
Resistive Switching Memories (RRAM) are one of the most promising candidates for future memory devices. Among other emerging RRAM concepts redox based resistive switches (ReRAM) attracted high attention to replace conventional FLASH technology. Here we show both on experimental and theoretical level new insights into nanoionic resistive switches. Of particular interest are recently discovered non...
Redox-based resistive switching devices are a potential candidate for future non-volatile memory. One type of these devices is the electrochemical metallization cell (ECM), which typically exhibit a bipolar operation scheme. However, at high current levels a transition to polarity independent RESET switching has been observed. This work presents a numerical simulation model of the RESET operation...
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