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In this letter, we compare the switching performances of Cu-based CBRAM cells having either Al2O3 or SiO2 dielectric layer. Both electrical and physical characterizations revealed different Cu mobility in the two dielectrics, impacting forming/switching speed and variability as well as functionality at low current. The modeling of the conduction also indicated different filament shapes in the two...
This paper reviews some essential aspects of the filamentary bipolar resistive switching concept, and how appropriate material design and technology development makes it possible to translate it into a very attractive memory device, opening pathways for future memory replacements on condition specific key roadblocks are overcome.
In this paper we demonstrate for the first time the origin of the deep reset and low switching variability obtained on pulse-programmed (100ns) 90nm-size W\Al2O3\TiW\CuCBRAM device operated at 10 μA. To this aim we develop a Quantum-Point-Contact (QPC) model describing the conduction of the CBRAM states down to deep current levels, allowing to estimate the effective size of the defect particles in...
In this paper we demonstrate excellent memory performances of a 90nm CMOS-friendly W\Al2O3\TiW\Cu CBRAM cell integrated in a 1T1R configuration and withstanding the back-end of line thermal budget of 400°C. The cell exhibits low-power and highly controlled set and reset operations, allowing reversible multilevel programming controlled by both the set current and the reset voltage. Low-voltage (<3V)...
In this article we study the thermal stability of Al 2 O 3 \Cu–Te bi-layers up to temperatures used in the back-end-of-line integration process flow of conductive-bridging random-access-memory (CBRAM) technology. We investigate the temperature dependence of the microstructure and morphology of the Cu x Te 1−x layers for 0.2<x<0.8. For x>0.7, phase separation...
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