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In this paper, the effects of various DRAM related thermal budgets on DRAM peripheral gate stacks using Al2O3, capping, La capping, and As I/I are evaluated. It is shown that Al2O3 (PMOS stacks) and As I/I (NMOS stacks) are relatively immune to the aggressive thermal budgets imposed by the DRAM process flow. Apart from the traditional trade-off between eWF shift and gate stack mobility, it is shown...
The impact of the Al2O3 position with respect to HfO'2 in the process flow, is investigated. It is shown that Al2O3 incorporation in order to increase the pMOS threshold voltage, slightly degrades the mobility, slightly increases NBTI and increases the EOT with respect to the reference without Al2O3 Moreover, the trap density profiles depend on the Al2O3 position: higher in the interfacial layer when...
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