Search results for: Sandrine Wagner

Items from 1 to 20 out of 22 results

article

Efficiency Optimized Distributed Transformers for Broadband Monolithic Millimeter-Wave Integrated Power Amplifier Circuits

Philipp Pahl, Sandrine Wagner, Hermann Massler, Arnulf Leuther, more

IEEE Transactions on Microwave Theory and Techniques > 2017 > 65 > 12-1 > 4901 - 4913

This paper revises the efficiency optimization equations for magnetic-transformer-based power combiner/ divider impedance transformation networks (e.g., distributed active transformer). It evaluates their usability for high millimeter-wave frequencies, where the distributed behavior of a transformer and its loss become relevant. As is demonstrated, the standard optimization equations do not lead to...

article

A Novel Unit Cell for Active Switches in the Millimeter-Wave Frequency Range

Daniel Müller, Gunnar Scherer, Ulrich J. Lewark, Hermann Massler, more

Journal of Infrared, Millimeter, and Terahertz Waves > 2018 > 39 > 2 > 161-176

This paper presents a novel transistor unit cell which is intended to realize compact active switches in the high millimeter-wave frequency range. The unit cell consists of the combination of shunt and common gate transistor within a four-finger transistor cell, achieving gain in the amplifying state as well as good isolation in the isolating state. Gate width-dependent characteristics of the unit...

chapter

Testbed for phased array communications from 275 to 325 GHz

Thomas Merkle, Axel Tessmann, Michael Kuri, Sandrine Wagner, more

2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) > 1 - 4

2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

The first modular 4-channel frontend for exploring phased array communications at a carrier frequency of 300 GHz was developed. A metamorphic HEMT process with a gate length of 35 nm was the key enabling technology for the integration of each transmit and receive channel. All channels implemented the quadrature direct conversion architecture. The measured RF bandwidth exceeded 55 GHz for the receive...

chapter

On-chip post-production tuning of I/Q frequency converters using adjustable coupler terminations

Christopher Grotsch, Axel Tessmann, Sandrine Wagner, Ingmar Kallfass

2017 12th European Microwave Integrated Circuits Conference (EuMIC) > 273 - 276

2017 12th European Microwave Integrated Circuits Conference (EuMIC)

This paper presents a broadband integrated doublebalanced I/Q-upconverter at 73.5 GHz in a 50 nm InGaAs-based metamorphic high electron mobility transistor technology including Lange couplers with voltage-controlled variable termination resistance. The variable resistance is implemented by using resistive FETs. This MMIC is designed for broadband communication with controllable LO suppression at the...

article

${W}$ -Band Time-Domain Multiplexing FMCW MIMO Radar for Far-Field 3-D Imaging

Daniela Bleh, Markus Rosch, Michael Kuri, Alexander Dyck, more

IEEE Transactions on Microwave Theory and Techniques > 2017 > 65 > 9 > 3474 - 3484

In this paper, a radar demonstrator system with real-time capability operating at

${W}$

-band is presented. It operates at 90–100 GHz and provides 3-D information about the illuminated scene. The system uses frequency modulated continuous wave signals to extract range information whereupon long-range applications are aimed at. It consists of a sparse array of 22 transmitting and 22 receiving antennas...

chapter

A 300 GHz MMIC-based quadrature receiver for wireless terahertz communications

Iulia Dan, Benjamin Schoch, Gulesin Eren, Sandrine Wagner, more

2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) > 1 - 2

2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)

A compact receiver MMIC for a 300 GHz wireless communication system has been developed in a 35 nm mHEMT technology. The circuit integrates an active frequency multiplier by three and a buffer amplifier for the LO signal, a single balanced, quadrature, fundamental resistive down-converter and an RF pre-amplifier. The chip measurements have shown that the receiver exhibits a conversion gain of −1 dB...

article

Efficient EM Simulation of GCPW Structures Applied to a 200-GHz mHEMT Power Amplifier MMIC

Yolanda Campos-Roca, Belén Amado-Rey, Sandrine Wagner, Arnulf Leuther, more

Journal of Infrared, Millimeter, and Terahertz Waves > 2017 > 38 > 5 > 596-608

The behaviour of grounded coplanar waveguide (GCPW) structures in the upper millimeter-wave range is analyzed by using full-wave electromagnetic (EM) simulations. A methodological approach to develop reliable and time-efficient simulations is proposed by investigating the impact of different simplifications in the EM modelling and simulation conditions. After experimental validation with measurements...

chapter

High-Gain AlGaN/GaN HEMT Single Chip E-Band Power Amplifier MMIC with 30 dBm Output Power

Erdin Ture, Dirk Schwantuschke, Axel Tessmann, Sandrine Wagner, more

2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) > 1 - 4

2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

This paper reports on the design, fabrication and measured performance of an E-band power amplifier MMIC delivering >1 W of output power. AlGaN/GaN based high-electron-mobility transistors (HEMTs) with 100 nm of gate length have been processed in a grounded coplanar transmission line technology in order to realize the four-stage high power amplifier chip. For the designed prototype, measurement...

article

A 50 to 146 GHz Power Amplifier Based on Magnetic Transformers and Distributed Gain Cells

Philipp Pahl, Sandrine Wagner, Hermann Massler, Sebastian Diebold, more

IEEE Microwave and Wireless Components Letters > 2015 > 25 > 9 > 615 - 617

A monolithic millimeter-wave integrated circuit power amplifier covering the entire V-, W- and F-band is presented. The amplifier applies magnetic distributed transformers in combination with traveling wave gain cells to achieve a $-3~{\rm dB}$ bandwidth that spans from 50 to 146 GHz, 12 dB gain and a maximum measured output power of 15 dBm. With a relative bandwidth of 98.3% the PA achieves the highest...

article

A Novel 1 $\times$ 4 Coupler for Compact and High-Gain Power Amplifier MMICs Around 250 GHz

Sebastian Diebold, Sandrine Wagner, Hermann Massler, Philipp Pahl, more

IEEE Transactions on Microwave Theory and Techniques > 2015 > 63 > 3 > 999 - 1006

For application in radar and communication systems operating in the frequency range around 250 GHz, a power amplifier (PA) millimeter-wave monolithic integrated circuit (MMIC) has been developed. The amplifier makes use of a novel coupler approach allowing for in-phase and equal-magnitude distribution of an incoming signal to four parallel output ports. This is possible due to a subtle use of grounded...

chapter

Backside Process Free Broadband Amplifier MMICs at D-Band and H-Band in 20 nm mHEMT Technology

Thomas Merkle, Arnulf Leuther, Stefan Koch, Ingmar Kallfass, more

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) > 1 - 4

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

High gain amplifier MMICs (monolithic microwave integrated circuits) addressing broadband radar and communication applications at the waveguide bands WR-6 (110 - 170 GHz) and WR-3 (220 - 325 GHz) are presented. All circuits are manufactured in the next generation metamorphic high electron mobility transistor (mHEMT) technology featuring 20 nm gate length and a strained 100% InAs channel. The transistors...

article

A Miniaturized Unit Cell for Ultra-Broadband Active Millimeter-Wave Frequency Multiplication

Ulrich J. Lewark, Sebastian Diebold, Sandrine Wagner, Axel Tessmann, more

IEEE Transactions on Microwave Theory and Techniques > 2014 > 62 > 6 > 1343 - 1351

A compact broadband unit cell for the design of broadband frequency multipliers is presented. Based on design methods from moderate frequencies, a novel integrated balanced field-effect transistor architecture is introduced, pushing ultra-broadband balanced frequency multiplication into the high millimeter-wave range. The realized microwave monolithic integrated circuits (MMICs) using this topology...

chapter

MMIC-based module-level frequency generation for e-band communication systems

Ulrich J. Lewark, Jochen Antes, Michael Kuri, Ralf Henneberger, more

2014 IEEE Radio and Wireless Symposium (RWS) > 85 - 87

2014 IEEE Radio and Wireless Symposium (RWS)

We present a PLL stabilized VCO at X-Band frequencies extended by a frequency multiplier-by-eight module forming a variable LO source for E-Band communication systems with enough output power to drive an E-Band mixer without additional post amplification. The module shows a 3-dB output bandwidth from 73 to 85 GHz with a saturated output power of 10 dBm. Together with the VCO module the source features...

article

A 200 GHz Medium Power Amplifier MMIC in Cascode Metamorphic HEMT Technology

Yolanda Campos-Roca, Axel Tessmann, Belen Amado-Rey, Sandrine Wagner, more

IEEE Microwave and Wireless Components Letters > 2014 > 24 > 11 > 787 - 789

A 200 GHz power amplifier is presented. The millimeter-wave monolithic integrated circuit (MMIC) has been realized in a 35 nm InAlAs/InGaAs cascode metamorphic high electron mobility transistor (MHEMT) process in grounded coplanar waveguide technology (GCPW). The amplifier demonstrates an output power of 14 mW with 11.4 dB compressed power gain at 200 GHz. This represents an increase in output power...

article

An Active 60-90 GHz Single Pole Double Throw Switch MMIC

Aleksey Dyskin, Sandrine Wagner, Dan Ritter, Ingmar Kallfass

Journal of Infrared, Millimeter, and Terahertz Waves > 2014 > 35 > 4 > 412-417

This paper introduces an active millimeter-wave switch in a GaAs metamorphic high electron mobility transistor (mHEMT) technology. The active switch exhibits broadband performance (60 to 90 GHz, 40%), a gain of 10 dB with flat frequency response and average noise figure of 2.8 dB. The unilateral receiver topology is dedicated to radiometry applications. The design combines two input-matched low noise...

chapter

Terahertz monolithic integrated circuits based on metamorphic HEMT technology for sensors and communication

Axel Tessmann, Michael Schlechtweg, Daniel Bruch, Ulrich J. Lewark, more

2013 Asia-Pacific Microwave Conference Proceedings (APMC) > 203 - 205

2013 Asia Pacific Microwave Conference - (APMC 2013)

For the next generation of sensors and communication systems operating at frequencies up to 600 GHz and above, the Fraunhofer IAF is developing a broad variety of millimeter-wave and terahertz monolithic integrated circuits (MMICs and TMICs) and modules. The monolithic integrated circuits are realized using the advanced metamorphic high electron mobility transistor (mHEMT) technology in the InGaAs/InAlAs...

chapter

Millimeter- and submillimeter-wave monolithic integrated circuits based on metamorphic HEMT technology for sensors and communication

Michael Schlechtweg, Axel Tessmann, Arnulf Leuther, Hermann Massler, more

2013 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS 2013) > 1 - 4

2013 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS)

For the next generation of sensors and communication systems operating at frequencies up to 600 GHz and above, the Fraunhofer IAF is developing a broad variety of millimeter- and submillimeter-wave monolithic integrated circuits (MMICs and S-MMICs) and modules. The monolithic integrated circuits are realized using the advanced metamorphic high electron mobility transistor (mHEMT) technology in the...

chapter

Performance comparison for millimeter-wave single-pole double throw switches

Aleksey Dyskin, Sandrine Wagner, Dan Ritter, Ingmar Kallfass

2013 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS 2013) > 1 - 5

2013 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS)

In this paper we present the performance comparison of different single-pole double throw (SPDT) switch topologies realized in metamorphic high electron mobility transistor (mHEMT) technology. Conventional series-series and shunt-shunt topology switches designed for 60 GHz and 94 GHz are compared to the asymmetrical topology switch designed for broadband performance from 60 to 90 GHz. Parameters like...

chapter

Comparison of two W-band low-noise amplifier MMICs with ultra low power consumption based on 50nm InGaAs mHEMT technology

Fabian Thome, Hermann Massler, Sandrine Wagner, Arnulf Leuther, more

2013 IEEE MTT-S International Microwave Symposium Digest (MTT) > 1 - 4

2013 IEEE/MTT-S International Microwave Symposium - MTT 2013

Two millimeter-wave monolithic integrated circuit (MMIC) low-noise amplifiers (LNA), operating in the frequency range between 58 and 110 GHz and 74 and 110 GHz, respectively, are presented. The W-band amplifiers employ a three-stage design in a 50nm InGaAs mHEMT technology and were optimized for minimum DC power consumption, using 2×10 and 2×5 μm transistors. For optimum bias conditions the first...

chapter

A compact 94 GHz FMCW radar MMIC based on 100 nm InGaAs mHEMT technology with integrated transmission signal conditioning

Christian Zech, Axel Hulsmann, Rainer Weber, Axel Tessmann, more

2013 European Microwave Integrated Circuit Conference > 436 - 439

2013 European Microwave Integrated Circuit Conference (EuMIC)

In this paper, a compact 94 GHz frequency-modulated continuous-wave (FMCW) radar monolithic microwave integrated circuit (MMIC) is presented. Besides the components required for radar application, the MMIC further offers a conditioning subcircuit for the transmitted signal, consisting of a frequency multiplier for upconversion of an external signal source and a variable gain power amplifier (VGPA)...

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INFONA - science communication portal

Search results for: Sandrine Wagner

Efficiency Optimized Distributed Transformers for Broadband Monolithic Millimeter-Wave Integrated Power Amplifier Circuits

A Novel Unit Cell for Active Switches in the Millimeter-Wave Frequency Range

Testbed for phased array communications from 275 to 325 GHz

On-chip post-production tuning of I/Q frequency converters using adjustable coupler terminations

${W}$ -Band Time-Domain Multiplexing FMCW MIMO Radar for Far-Field 3-D Imaging

A 300 GHz MMIC-based quadrature receiver for wireless terahertz communications

Efficient EM Simulation of GCPW Structures Applied to a 200-GHz mHEMT Power Amplifier MMIC

High-Gain AlGaN/GaN HEMT Single Chip E-Band Power Amplifier MMIC with 30 dBm Output Power

A 50 to 146 GHz Power Amplifier Based on Magnetic Transformers and Distributed Gain Cells

A Novel 1 $\times$ 4 Coupler for Compact and High-Gain Power Amplifier MMICs Around 250 GHz

Backside Process Free Broadband Amplifier MMICs at D-Band and H-Band in 20 nm mHEMT Technology

A Miniaturized Unit Cell for Ultra-Broadband Active Millimeter-Wave Frequency Multiplication

MMIC-based module-level frequency generation for e-band communication systems

A 200 GHz Medium Power Amplifier MMIC in Cascode Metamorphic HEMT Technology

An Active 60-90 GHz Single Pole Double Throw Switch MMIC

Terahertz monolithic integrated circuits based on metamorphic HEMT technology for sensors and communication

Millimeter- and submillimeter-wave monolithic integrated circuits based on metamorphic HEMT technology for sensors and communication

Performance comparison for millimeter-wave single-pole double throw switches

Comparison of two W-band low-noise amplifier MMICs with ultra low power consumption based on 50nm InGaAs mHEMT technology

A compact 94 GHz FMCW radar MMIC based on 100 nm InGaAs mHEMT technology with integrated transmission signal conditioning

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