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Strong light-matter interaction in 2D transition metal dichalcogenides (TMDs) presents a significant opportunity for many optoelectronic applications [1-7]. In photodetector devices, the transit time of photogenerated carriers is limited by their mobility, which affects the photoconductive gain and response time of the device. In this work, we report significant improvement in photocurrent-time response...
Black phosphorous (BP), due to its superior carrier transport properties which promise various transistor applications, has seen significant research interest in recent years. An inherent direct and appreciable band gap along with high mobility values makes it very attractive for optoelectronics and flexible devices. However, interaction between BP and electron beam has not been investigated experimentally...
A controllable and area selective doping process, especially for p-type Molybdenum disulphide (MoS2), is essential for the realization of various p/n junction-based devices. In this work, we demonstrate p-type doping of multilayer MoS2 with phosphorus (P) as a dopant using a CMOS-compatible plasma immersion ion implantation (PIII) technique. Detailed physical characterization including XPS and SIMS,...
High contact resistance (RC) at metal-Molybdenum disulfide (MoS2) interface obscures the intrinsic transport properties of MoS2 [1] and limits its potential as a channel material for future CMOS technology. In this work, we report reduction in the effective Schottky barrier height (SBH) and contact resistance at the metal-MoS2 interface using an ultra-thin TiO2 interfacial layer (IL) resulting in...
The search of a p-type metal contact on MoS2 has remained inconclusive, with high work-function metals such as Au, Ni and Pt showing n-type behavior [1] and mixed reports of n as well as p-type behavior for Pd. In this work we report for the first time, quantitative band alignment of Pd and Au-MoS2 interfaces using low temperature and scanning photocurrent measurements on MoS2 transistors with varying...
The PMSM motors are increasingly playing an important role in modern motor drives. A shaft encoder or sensor connected to the shaft of the motor provides feedback required for controlling torque and speed to the PMSM. So many motor drives are not abiding by the application of this feedback device because of their reliability concerns, price, and space and weight limitations. This paper analysis the...
This paper proposes a asymmetric FinFET (Fin shaped Field Effect Transistor) for robust and low power SRAM (Static Random Access Memory). This FinFET device uses Asymmetric Drain (AD), Asymmetric Drain Spacer Extension (ADSE) and Asymmetric Lateral Diffusion (ALD) techniques. The proposed structure exploits asymmetrical behavior of current to improve read-write stability for SRAM without compromising...
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