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Experimental observations of simultaneous existence of fast and slow trap states in AlGaN/GaN HEMTs are presented here. The presence of traps with time constants (0.1 ms ∼ 0.1 s) and activation energies (0.3 eV∼0.54 eV) was detected from transconductance dispersion and admittance curves. These fast traps may assist the high gate leakage currents in AlGaN/GaN HEMTs. The slower traps having the time...
Admittance spectroscopy of pristine AlGaN/GaN metal-semiconductor interface reveals the distributed trap activation energy in the order of 0.24 eV by mercury probe capacitance-voltage (C-V) measurements. The trap densities of states (Dit) of these traps were extracted in the range of ∼1.9×1012 eV−1cm−2 with the reverse bias voltage ranging from −5 Volts to 0 Volt. A very good fitting of admittance...
An explanation for the observed drain current collapse in AlGaN/GaN high electron mobility transistors is presented. The drain current–voltage characteristics which show this undesirable behavior have been modeled using the physics-based ATLAS device simulator by Silvaco. A basic theory for the determination of virtual gate length for a three terminal device has been developed and used...
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